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| Part Number | 2N3700 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2N3700 |
| Manufacturer | STMicroelectronics |
| Title | Silicon Planar Epitaxial NPN transistor |
| Description | The 2N3700 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, intended for small signal, low noise industrial applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitte. |
| Features |
) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain I C = 0.1 mA I C = 10 mA I C = 150 mA I C = 500 mA IC = 1 A I C = 150 mA T amb = – 55 °C hfe fT C EBO C CBO r b b ’C b ’c Small Signal Current Gain Transition Frequency Emitter-base C. |
| Part Number | 2N3700 |
| Manufacturer | ON Semiconductor |
| Title | Low Power Transistor |
| Description | 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 80 Collector −Base Voltage VCBO 140 Emitter . |
| Features |
• MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 80 Collector −Base Voltage VCBO 140 Emitter −Base Voltage VEBO 7.0 Collector Current − Continuous IC 1.0 Total Device Dissipation @ TA = 25°C 2N3019, 2N3019S 2N3700 PT 800 500 Unit Vdc Vdc Vdc Adc mW To. |
| Part Number | 2N3700 |
| Manufacturer | Microsemi Corporation |
| Title | LOW POWER NPN SILICON TRANSISTOR |
| Description | TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices 2N3019 2N3019S 2N3057A 2N3700 2N3700S Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissip. |
| Features | dix A for package ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) outline Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 µAdc V(BR)CBO 140 Vdc Emitter-Base Breakdown Voltage IE = 100 µAdc V(BR)EBO 7.0 Vdc Collector-Emitter Breakdown Current IC = 30 mAdc V(BR)CEO 80 Vdc 6 Lake Street, Lawrence, MA 01841 120101 . |
| Part Number | 2N3700 |
| Manufacturer | TT |
| Title | SILICON NPN TRANSISTOR |
| Description | SILICON NPN TRANSISTOR 2N3700 • High Voltage, Medium Power Silicon Planar NPN Transistor • Hermetic TO18 Metal Package • High Reliability Screening Options Available • CECC and Space Quality Level Options ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage . |
| Features | . |
| Part Number | 2N3700 |
| Manufacturer | VPT |
| Title | NPN Low Power Silicon Transistor |
| Description | at any time, without notice. VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherw. |
| Features |
• JANS Qualified to MIL-PRF-19500/391 • 2N3700 & 2N3700UB available in JANSR JEDEC registered 2N3700, 2N3057 • Lightweight & Low Power • Ideal for Space, Military, & other High Reliability Applications • TO-18 (TO-206AA), TO-46 (TO-206AB) Surface Mount UB Package Styles Package Rev. V2 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Bas. |
| Part Number | 2N3700 |
| Manufacturer | MA-COM |
| Title | NPN Low Power Silicon Transistor |
| Description | 2N3057A, 2N3700, 2N3700UB NPN Low Power Silicon Transistor Features JANS Qualified to MIL-PRF-19500/391 2N3700 & 2N3700UB available in JANSR JEDEC registered 2N3700, 2N3057 Lightweight & Low Power Ideal for Space, Military, & other High Reliability Applications TO-18 (TO-206AA), TO-46 (TO-. |
| Features |
JANS Qualified to MIL-PRF-19500/391 2N3700 & 2N3700UB available in JANSR JEDEC registered 2N3700, 2N3057 Lightweight & Low Power Ideal for Space, Military, & other High Reliability Applications TO-18 (TO-206AA), TO-46 (TO-206AB) Surface Mount UB Package Styles Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Bas. |
| Part Number | 2N3700 |
| Manufacturer | TT |
| Title | SILICON NPN TRANSISTOR |
| Description | SILICON NPN TRANSISTOR 2N3700 • High Voltage, Medium Power Silicon Planar NPN Transistor • Hermetic TO18 Metal Package • High Reliability Screening Options Available • CECC and Space Quality Level Options ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage . |
| Features | . |
| Part Number | 2N3700 |
| Manufacturer | Central Semiconductor |
| Title | NPN TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 are silicon NPN transistors designed for high current general purpose applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Bas. |
| Features | . |
| Part Number | 2N3700 |
| Manufacturer | CDIL |
| Title | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| Description | SYMBOL VALUE Collector -Base Voltage VCBO 140 Collector -Emitter Voltage VCEO 80 Emitter -Base Voltage VEBO 7.0 Collector Current IC 1.0 Power Dissipation @Ta=25 deg C PD 500 Derate Above 25 deg C 2.85 @TC=25 deg C PD 1.8 Derate Above 25 deg C 10.6 Operating And Storage Junc. |
| Features | . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3700DCSM |
Seme LAB |
HIGH VOLTAGE / MEDIUM POWER / NPN DUAL TRANSISTOR |
|
| 2 | 2N3700HR |
STMicroelectronics |
NPN transistor |
|
| 3 | 2N3700S |
Microsemi |
LOW POWER NPN SILICON TRANSISTOR |
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| 4 | 2N3700UB |
MA-COM |
NPN Low Power Silicon Transistor |
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| 5 | 2N3700UB |
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| 6 | 2N3701 |
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| 7 | 2N3701 |
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| 8 | 2N3702 |
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| 9 | 2N3702 |
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| 10 | 2N3702 |
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