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2N3700 |
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| Part Number | 2N3700 |
| Manufacturer | Multicomp |
| Description | This is a silicon NPN transistor in a TO-18 type case designed primarily for amplifier and switching applications. The device features high breakdown voltage, Low leakage current, low capacity, and b... |
| Features |
high breakdown voltage, Low leakage current, low capacity, and beta useful over an extremely wide current range.
Maximum Ratings:
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Continuous Collector Current Total Device Dissipation -(TA = +25°C), Derate Above 25°C Total Device Dissipation -(TA = +25°C), Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range, Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Lead Temperature (During Soldering, 1/16" from case, 60sec max)
Symbol VCBO VCEO VEBO IC
PD
TJ Ts... |
| Document |
 2N3700 Data Sheet
PDF 225.65KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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