| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Stanson Technology |
MOSFET l -30V/-9.2A, RDS(ON) =-22mΩ (Typ.) @VGS =-10V l -30V/-7.0A, RDS(ON) = 30mΩ @VGS = -4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design PART MARKIN |
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Stanson Technology |
Dual P-Channel Enhancement Mode MOSFET l -30V/-7.2A, RDS(ON) = 20mΩ (Typ.) @VGS =-10V l -30V/-5.6A, RDS(ON) = 25mΩ @VGS = -4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design PART MARKING SOP |
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Stanson Technology |
MOSFET TO-252 TO-251 -30V/-25.0A, RDS(ON) = 45mΩ (Typ.) @VGS = -10V -30V/-16.0A, RDS(ON) = 78mΩ @VGS =-5.0V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design |
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Stanson Technology |
MOSFET -60V/-20.0A, RDS(ON) = 20mΩ(typ.) @VGS = -10V -60V/-20.0A, RDS(ON) = 27mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design ( STP601D ) PART |
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Stanson Technology |
P Channel Enhancement Mode MOSFET z z z z z -30V/-5.2A, RDS(ON) = 55m-ohm @VGS = -10V -30V/-4.2A, RDS(ON) = 75m-ohm @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TSOP-6P package design 1.2.5.6.Drain |
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Stanson Technology |
MOSFET -20V/-0.45A, RDS(ON) =520ohm @VGS =-4.5V -20V/-0.35A, RDS(ON) =700ohm @VGS =-2.5V -20V/-0.25A, RDS(ON) =950ohm @VGS =-1.8V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability SOT-52 |
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Stanson Technology |
MOSFET ◆ -20V/-5.0A, RDS(ON)=90mohm@VGS=-4.5V ◆ -20V/-3.5A, RDS(ON)=110mohm@VGS=-2.5V ◆ -20V/-1.7A, RDS(ON)=140mohm@VGS=-1.8V 67YW D DG Y: Year A: Week Code ◆ Super high density cell design for extremely low RDS(ON) ◆ Exceptional an-resistance and maximum |
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Stanson Technology |
MOSFET ◆ -20V/-5.0A, RDS(ON)=90mohm@VGS=-4.5V ◆ -20V/-3.5A, RDS(ON)=110mohm@VGS=-2.5V ◆ -20V/-1.7A, RDS(ON)=140mohm@VGS=-1.8V 67YW D DG Y: Year A: Week Code ◆ Super high density cell design for extremely low RDS(ON) ◆ Exceptional an-resistance and maximum |
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Stanson Technology |
MOSFET TO-252 TO-251 -40V/-12.0A, RDS(ON) = 18mΩ (Typ.) @VGS = -10V -40V/-8.0A, RDS(ON) = 24mΩ @VGS =-4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design |
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Stanson Technology |
MOSFET -60V/-20.0A, RDS(ON) = 20mΩ(typ.) @VGS = -10V -60V/-20.0A, RDS(ON) = 27mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design ( STP601D ) PART |
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Stanson Technology |
MOSFET -60V/-10.0A, RDS(ON) = 150mΩ（Typ.） @VGS = -10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252package design PART MARKING Y: Year Code A: Date Code Q: Process Code STANSON |
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Stanson Technology |
MOSFET ◆ -30V/-2.8A, RDS(ON)=105mohm@VGS=-10V ◆ -30V/-2.5A, RDS(ON)=135mohm@VGS=-4.5V ◆ Super high density cell design for extremely low RDS(ON) ◆ Exceptional an-resistance and maximum DC current capability ◆ TSOP-6P package design G1 S2 G2 Y: Year A: Prod |
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Stanson Technology |
MOSFET -60V/-10.0A, RDS(ON) = 23mΩ (Typ.) @VGS =-10V -60V/-8.0A, RDS(ON) = 28mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 STANS |
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Stanson Technology |
MOSFET -60V/-10.0A, RDS(ON) = 23mΩ (Typ.) @VGS =-10V -60V/-8.0A, RDS(ON) = 28mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 STANS |
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Stanson Technology |
MOSFET l -60V/-5.0A, RDS(ON) = 60mΩ (Typ.) @VGS =-10 l -60V/-3.0A, RDS(ON) = 85mΩ @VGS = -4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design PART MARKING |
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Stanson Technology |
MOSFET -30V/-26.0A, RDS(ON) = 20mΩ @VGS = -10V -30V/-16.0A, RDS(ON) = 36mΩ @VGS =-4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252 package design PART MARKING Y: Year Code A: |
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Stanson Technology |
MOSFET l -40V/-12.0A, RDS(ON) = 36mΩ (Typ.) @VGS = -10V l -40V/-8.0A, RDS(ON) = 52mΩ @VGS =-4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252,TO-251 package design PA |
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Desde 2024. D4U Semiconductor.
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