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STP6506 |
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| Part Number | STP6506 |
| Manufacturer | Stanson Technology |
| Description | The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to... |
| Features |
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STP6506 2010. V1
STP6506
Dual P Channel Enhancement Mode MOSFET
-2.8A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=70℃
ID IDM
Continuous Source Current (Diode Conduction)
IS
Power Dissipation Operation Junction Temperature
TA=25℃ TA=70℃
PD TJ
Storage Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
T≦10sec Steady State
RθJA
Typical
Unit
-30 V
±20
V
-2.8 -2.1
-8
A A
-1.4
A
1.15 0.75 -55/150
W ℃
-55/1... |
| Document |
 STP6506 Data Sheet
PDF 836.92KB |
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Desde 2024. D4U Semiconductor.
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