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STP6635GH |
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| Part Number | STP6635GH |
| Manufacturer | Stanson Technology |
| Description | STP6635GH is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve th... |
| Features |
s otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=70℃
VGSS ID
IDM
Continuous Source Current (Diode Conduction)
IS
Power Dissipation
TA=25℃
PD
Operation Junction Temperature
TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
-30 ±20 -40.0 -25.0 -150 -32 44 150 -55/150 60
Unit V V A A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2009, Stanson Corp.
STP6635GH 2009. V1
STP6635GH... |
| Document |
 STP6635GH Data Sheet
PDF 495.20KB |
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