STP601 |
Part Number | STP601 |
Manufacturer | Stanson Technology |
Description | STP601/STP601D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP401 has been designed specially to improv... |
Features |
l Enhancement Mode MOSFET
-30A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted)
Parameter Drain-Source Voltage
Symbo l
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=100℃
VGSS ID
IDM
Continuous Source Current (Diode Conduction)
IS
Power Dissipation
TA=25℃
PD
Operation Junction Temperature
TJ
Storage Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
-60 ±20 -30.0 -22.0 -110 -30
60 150 -55/150 25
Unit V V A A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansont... |
Document |
STP601 Data Sheet
PDF 390.99KB |
Similar Datasheet
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