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STP4189D |
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| Part Number | STP4189D |
| Manufacturer | Stanson Technology |
| Description | STP4189D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve th... |
| Features |
UM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
IS PD TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
-40 ±20 -50 -20 52.5 31 150 -55/150 50
Unit V V A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2009, Stanson Corp.
STP4189D 2009. V1
STP4189D
P Channel Enhancement Mode MOSF... |
| Document |
 STP4189D Data Sheet
PDF 567.21KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | STP4189D |
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P-Channel Enhancement Mode MOSFET |
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| 2 | STP413D |
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