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STP607D |
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| Part Number | STP607D |
| Manufacturer | Stanson Technology |
| Description | STP607D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP607D has been designed specially to improve the ... |
| Features |
l
VDSS
Typical -60
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=100℃
VGSS ID
IDM
±20
-10.0 -6.0
-20
Continuous Source Current (Diode Conduction)
IS
-12
Power Dissipation
TA=25℃
PD
25
Operation Junction Temperature
TJ 150
Storgae Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RθJA
20
Unit V V A A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
.
STP607D 2010. V1
STP607D
P Channel Enhancement Mode MOSFET
-10.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless ot... |
| Document |
 STP607D Data Sheet
PDF 1.99MB |
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