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STP3052D |
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| Part Number | STP3052D |
| Manufacturer | Stanson Technology |
| Description | STP3052D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to ... |
| Features |
el Enhancement Mode MOSFET
-25.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=70℃
VGSS ID
IDM
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
IS PD TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
-30
±20 -25.0 -18.0 -100
-15 40 20 150
-55/150
105
Unit V V A A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 US... |
| Document |
 STP3052D Data Sheet
PDF 656.01KB |
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