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STP6623 |
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| Part Number | STP6623 |
| Manufacturer | Stanson Technology |
| Description | SCRIPTION STP6623 P Channel Enhancement Mode MOSFET -18.0A STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench techno... |
| Features |
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
VDSS VGSS
ID IDM IS PD TJ
Storgae Temperature Range Thermal Resistance-Junction to Ambient
TSTG RθJA
Typical
-60
±20 -18.0 -11.0
-50
-4.3 3.1 2.0 -55/150
-55/150
70
Unit V V A A A W ℃ ℃ ℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
.
STP6623 2010. V1
STP6623
P Channel Enhancement Mode MOSFET
-18.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
... |
| Document |
 STP6623 Data Sheet
PDF 443.35KB |
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