| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Seme LAB |
N-Channel Power MOSFET • HERMETICALLY SEALED TO –3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 100V 28A 0.077Ω • SIMPLE D |
|
|
|
|
Seme LAB |
N-CHANNEL POWER MOSFET • HERMETICALLY SEALED TO –3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 1 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 100V 38A 0.055Ω • SIMPLE D |
|
|
|
|
Seme LAB |
N-CHANNEL POWER MOSFET 0.89 1.14 1 2 3 12.70 19.05 400V 6.9A 0.55Ω 16.38 16.89 13.39 13.64 • HERMETICALLY SEALED TO –220 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT 2.54 BSC 2.65 2.75 TO –220M – Metal Package Pad 1 – Gate Pad 2 – Drain Pad 3 – Source • S |
|
|
|
|
Seme LAB |
N-Channel Power MOSFET ! 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 100V 11A 0.19W 0 .7 6 (0 .0 3 0 ) m in . 9 .6 7 (0 .3 8 1 ) 9 .3 8 (0 .3 6 9 ) 1 1 .5 8 (0 .4 5 6 ) 1 1 .2 8 (0 .4 4 4 ) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 |
|
|
|
|
Seme LAB |
P-Channel Power MOSFET • HERMETICALLY SEALED TO –3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 –200V –6.5A 0.8Ω • SIMPLE |
|
|
|
|
Seme LAB |
P-Channel Power MOSFET Pin 3 – Drain • P –CHANNEL POWER MOSFET • HIGH VOLTAGE • INTEGRAL PROTECTION DIODE • AVAILABLE IN TO-3 (TO-204AA) AND CERAMIC SURFACE MOUNT PACKAGES 1 3 0 .7 6 (0 .0 3 0 ) m in . 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 9 .6 9 .3 1 1 .5 1 1 |
|
|
|
|
Semelab |
P-Channel Power MOSFET -100V -31A 0.060Ω 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 |
|
|
|
|
Seme LAB |
N-Channel MOSFET conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions di |
|
|
|
|
Seme LAB |
N-CHANNEL POWER MOSFET • HERMETICALLY SEALED ISOLATED PACKAGE • AVALANCHE ENERGY RATING 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 1 2 3 20.07 (0.790) 20.32 (0.800) 60V 35A * 0.027Ω 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC |
|
|
|
|
Seme LAB |
N-CHANNEL POWER MOSFET • N –CHANNEL MOSFET • HIGH VOLTAGE • INTEGRAL PROTECTION DIODE • HERMETIC ISOLATED TO-254 PACKAGE 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 1 2 3 20.07 (0.790) 20.32 (0.800) 200V 27.4A 0.100Ω 0.89 (0.03 |
|
|
|
|
Seme LAB |
N-CHANNEL POWER MOSFET • HERMETICALLY SEALED TO –3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 1 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 60V 44A 0.028Ω • SIMPLE DR |
|
|
|
|
Seme LAB |
N-Channel Power MOSFET • HERMETICALLY SEALED TO –3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 100V 14A 0.18Ω • SIMPLE DR |
|
|
|
|
Seme LAB |
N-CHANNEL POWER MOSFET 100V 19A 0.070W 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 |
|
|
|
|
Seme LAB |
N-Channel Power MOSFET • HERMETICALLY SEALED TO3 METAL PACKAGE 16.97 (0.668) 16.87 (0.664) • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE TO3 METAL PACKAGE Pin 1 = Source Pin 2 Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM |
|
|
|
|
Seme LAB |
N-Channel Power MOSFET • HERMETICALLY SEALED TO –3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 1 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 200V 30A 0.085Ω • SIMPLE D |
|
|
|
|
Seme LAB |
N-Channel Power MOSFET 500V 13A 0.4W 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.52 (0.060) 7.87 (0.310) 6.99 (0.275) • HERMETICALLY SEALED TO –3 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. TO –3 Met |
|
|
|
|
Seme LAB |
N-Channel Power MOSFET (ON) Characteristic Drain – Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V) Gate – Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain – Source On State Resistance 2 Test Conditions VGS = 0V , ID = 1mA VDS |
|
|
|
|
Seme LAB |
P-Channel Power MOSFET 0.89 1.14 16.38 16.89 13.39 13.64 1 2 3 12.70 19.05 -100V -9.3A 0.31W 10.41 10.92 2.54 BSC 2.65 2.75 • HERMETICALLY SEALED TO –220 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS TO –220M – Metal Package Pad 1 – Gate Pad 2 – Drain Pad 3 – Source • |
|
|
|
|
Seme LAB |
N-CHANNEL POWER MOSFET • REPETITIVE AVALANCHE RATING • ISOLATED AND HERMETICALLY SEALED • ALTERNATIVE TO TO-3 PACKAGE 100V 34A 0.070W 1 2 3 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 20.07 (0.790) 20.32 (0.800) 3.81 (0.150) BSC • SIMPLE DRIVE REQUIREMENTS • EASE OF |
|
|
|
|
Seme LAB |
N-CHANNEL POWER MOSFET • N –CHANNEL MOSFET • HIGH VOLTAGE • INTEGRAL PROTECTION DIODE • HERMETIC ISOLATED TO-254 PACKAGE 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 1 2 3 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 20.07 (0.790) |
|
Desde 2024. D4U Semiconductor.
|