| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide vari |
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Thinki Semiconductor |
N-Channel Trench Process Power MOSFET Transistor ● VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply ● Inverter Application G DS TO-220CB Top View Schemat |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operati |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide vari |
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Inchange Semiconductor |
N-channel mosfet transistor With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS(ON)0.4 ;I D=9A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL VDSS VGS ID Ptot Tj Tstg PARAMETER Drain-source voltage (VGS=0) Gate-source voltag |
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Fairchild Semiconductor |
Power MOSFET • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS R |
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Fairchild Semiconductor |
IRFR120N • 8.4A, 100V • rDS(ON) = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Sur |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high effci |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Advanced Process Technology ·Dynamic dv/dt Rating ·175°C Operating Temperature ·Fast Switching ·Fully Avalanche Rated DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Low drain-source on-resistance: RDS(ON) ≤85mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Vo |
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Fairchild Semiconductor |
N-Channel Power MOSFET • 9.2A, 100V • rDS(ON) = 0.270Ω • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Sur |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switch mode power supply ·Unint |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current –ID=17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed |
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Motorola Semiconductor |
Power MOSFET |
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Thinki Semiconductor |
N-Channel Trench Power MOSFETs ● VDS=60V；ID=45A@ VGS=10V； RDS(ON)<7.5mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply G DS TO-251 Top View Schematic Diagram VDSS = 60 V IDS |
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Inchange Semiconductor |
P-Channel MOSFET Transistor ·Static drain-source on-resistance: RDS(on)≤0.02Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device |
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Fairchild Semiconductor |
N-Channel Power MOSFETs • 4.7A, 100V • rDS(ON) = 0.540Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • 175oC Operating Temperature • Related Literature - TB33 |
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Inchange Semiconductor |
N-Channel MOSFET Transistor With TO-220 package Simple drive requirements Fast switching V DSS=500V; RDS(ON)1.5 ;I 1.gate 2.drain 3.source D=4.5A Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER VDSS Drain-source voltage (VGS=0) VGS Gate-source voltage ID Drain Curren |
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Desde 2024. D4U Semiconductor.
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