IRFU110 |
Part Number | IRFU110 |
Manufacturer | Fairchild Semiconductor |
Description | Data Sheet IRFR110, IRFU110 January 2002 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guarante... |
Features |
• 4.7A, 100V • rDS(ON) = 0.540Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-252AA GATE SOURCE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation IRFR110, IRFU110 Rev. B IRFR110, IRFU110 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to So... |
Document |
IRFU110 Data Sheet
PDF 95.15KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRFU110 |
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N-Channel Power MOSFETs | |
2 | IRFU110 |
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Power MOSFET | |
3 | IRFU110 |
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4 | IRFU110A |
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5 | IRFU1010Z |
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6 | IRFU1010Z |
INCHANGE |
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