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IRF3205 |
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| Part Number | IRF3205 |
| Manufacturer | Inchange Semiconductor |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 110 IDM Drain Current-Single Pulsed 390 PD Total Dissipation @TC=25℃ 200 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A ... |
| Document |
 IRF3205 Data Sheet
PDF 246.30KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF320 |
Samsung semiconductor |
N-Channel Power MOSFET |
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| 2 | IRF320 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 3 | IRF320 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 4 | IRF320 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | IRF320 |
Harris |
N-Channel Power MOSFETs |
|
| 6 | IRF3205 |
Thinki Semiconductor |
N-Channel Trench Process Power MOSFET Transistor |
|
| 7 | IRF3205 |
International Rectifier |
Power MOSFET |
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| 8 | IRF3205 |
nELL |
N-Channel Power MOSFET |
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| 9 | IRF3205A |
nELL |
N-Channel Power MOSFET |
|
| 10 | IRF3205H |
nELL |
N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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