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FR120N |
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| Part Number | FR120N |
| Manufacturer | Fairchild Semiconductor |
| Description | IRFR120, IRFU120 Data Sheet January 2002 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs www.datasheet4u.com These are N-Channel enhancement mode silicon gate Features • 8.4A, 100V • rDS(ON) = 0.270Ω... |
| Features |
• 8.4A, 100V • rDS(ON) = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay... |
| Document |
 FR120N Data Sheet
PDF 148.78KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FR1205 |
LF |
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| 2 | FR1205CT |
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| 3 | FR1205FCT |
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| 4 | FR12 |
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| 5 | FR12-0001 |
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| 6 | FR12-0001 |
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3- Port DROP - IN CIRCULATOR / ISOLATOR 869 - 894 MHz |
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Desde 2024. D4U Semiconductor.
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