No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz • • Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P –1dB = 120 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Mo |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz • • Broadband internal matching Typical two –carrier WCDMA performance at 2140 MHz - Average output power = 28 W - Linear Gain = 13.5 dB - Efficiency = 25% - Intermodulation distortion = –37 dBc - Adjacent channel power = –42 dBc Typical CW performanc |
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Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FETs include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reli |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz • • Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P –1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body M |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz • • Internal matching for wideband performance Typical two –carrier 3GPP WCDMA performance - Average output power = 19 W at –37 dBc - Efficiency = 25% Typical CW performance - Output power at P –1dB = 105 W - Gain = 15 dB - Efficiency = 53% Integrated |
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Infineon Technologies AG |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz • • Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P –1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body M |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz • • Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P –1dB = 90 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Mod |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz • • Broadband internal matching Typical two –carrier WCDMA performance - Average output power = 7.0 W - Gain = 16 dB - Efficiency = 25% - IM3 = –37 dBc Typical CW performance - Output power at P –1dB = 36 W - Gain = 15 dB - Efficiency = 53% Integrated |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz • • Broadband internal matching Typical two –carrier WCDMA performance - Average output power = 7.0 W - Gain = 16 dB - Efficiency = 25% - IM3 = –37 dBc Typical CW performance - Output power at P –1dB = 36 W - Gain = 15 dB - Efficiency = 53% Integrated |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz • • Internal matching for wideband performance Typical two –carrier WCDMA performance - Average output power = 11.5 W - Gain = 14 dB - Efficiency = 27% - IM3 = –37 dBc Typical CW performance - Output power at P –1dB = 50 W - Linear gain = 14 dB - Effic |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz • • Internal matching for wideband performance Typical two –carrier WCDMA performance - Average output power = 11.5 W - Gain = 14 dB - Efficiency = 27% - IM3 = –37 dBc Typical CW performance - Output power at P –1dB = 50 W - Linear gain = 14 dB - Effic |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz • • Broadband internal matching Typical two –carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 = –37 dBc - ACPR < –42 dBc Typical CW performance - Output power at P –1dB = 180 W - Efficiency = 50% Integrate |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz • • Broadband internal matching Typical two –carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 = –37 dBc - ACPR < –42 dBc Typical CW performance - Output power at P –1dB = 180 W - Efficiency = 50% Integrate |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz • • Broadband internal matching Typical two –carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 = –37 dBc - ACPR < –42 dBc Typical CW performance - Output power at P –1dB = 180 W - Efficiency = 50% Integrate |
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Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FET • • • Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 25 W - Linear Gain = 17.0 dB - Efficiency = 27.5% - Inter |
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Infineon Technologies |
High Power RF LDMOS Field Effect Transistor include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB183408SV Package H-3 |
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Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FETs include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reli |
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Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FETs include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reli |
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Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FETs include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PT |
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