PTFB182503EL Infineon Technologies Thermally-Enhanced High Power RF LDMOS FETs Datasheet. existencias, precio

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PTFB182503EL

Infineon Technologies
PTFB182503EL
PTFB182503EL PTFB182503EL
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Part Number PTFB182503EL
Manufacturer Infineon (https://www.infineon.com/) Technologies
Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and ou...
Features include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB182503EL H-33288-6 PTFB182503FL H-34288-4/2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.85 A, ƒ = 1842 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, 10 MHz carrier spacing -30 35 -35 Efficiency -40 30 25 IM3 -45 -50 ACPR 20 15 10 -55 38 40 42 44 46 48 Average Output Power (dBm) 5 50 Fea...

Document Datasheet PTFB182503EL Data Sheet
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