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PTF210451 |
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| Part Number | PTF210451 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • • I... |
| Features |
• • Internal matching for wideband performance Typical two –carrier WCDMA performance - Average output power = 11.5 W - Gain = 14 dB - Efficiency = 27% - IM3 = –37 dBc Typical CW performance - Output power at P –1dB = 50 W - Linear gain = 14 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI Drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power Two –Carrier WCDMA Drive-Up VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -30 Efficiency 30 25 20 ACPR -45 -50 -55 30 32 3... |
| Document |
 PTF210451 Data Sheet
PDF 406.91KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | PTF210451E |
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LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz |
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| 2 | PTF210301 |
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LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
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| 3 | PTF210301A |
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| 4 | PTF210301E |
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| 5 | PTF210901 |
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LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
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| 6 | PTF210901E |
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LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
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Desde 2024. D4U Semiconductor.
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