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PTF080901E |
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| Part Number | PTF080901E |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. ... |
| Features |
• • Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P –1dB = 120 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz 0 55 Efficiency 50 45 40 35 30 400 kHz 25 20 600 kHz 36 38 40 42 44 46 48 50 15 10 -10 -20 -30 -40 -50 -60 -70 -80 -90 • Modulation Spectrum (dB... |
| Document |
 PTF080901E Data Sheet
PDF 205.95KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | PTF080901 |
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Desde 2024. D4U Semiconductor.
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