PTFA191001F Infineon Technologies Thermally-Enhanced High Power RF LDMOS FET Datasheet. existencias, precio

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PTFA191001F

Infineon Technologies
PTFA191001F
PTFA191001F PTFA191001F
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Part Number PTFA191001F
Manufacturer Infineon (https://www.infineon.com/) Technologies
Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WC...
Features


• Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 25 W - Linear Gain = 17.0 dB - Efficiency = 27.5% - Intermodulation distortion =
  –37 dBc - Adjacent channel power =
  –41.0 dBc Typical two-carrier IS-95 performance at 1930 MHz, 30 V - Average output power = 25 W - Efficiency = 28% - Intermodulation distortion =
  –35 dBc @ 1.2288 - Adjacent channel power =
  –51 dBm Typical CW performance, 1960 MHz, 30 V - Output power at P
  –1dB = 130 W - Efficiency = 56% Int...

Document Datasheet PTFA191001F Data Sheet
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