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PTFB183408SV |
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| Part Number | PTFB183408SV |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, hig... |
| Features |
include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFB183408SV Package H-37275G-6/2
IMD & ACPR (dBc) Drain Efficiency (%)
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8:1,
10 MHz carrier spacing, BW = 3.84 MHz
-25 35
-30 30
-35 IMD Low IMD Up
-40
25 20
-45 15
-50
ACPR
10
-55
Efficiency
5
-60
b183408sv gr1
0
36 38 40 42 44 46 48 50 52
Average Output Power... |
| Document |
 PTFB183408SV Data Sheet
PDF 250.19KB |
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Desde 2024. D4U Semiconductor.
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