PTFB191501F |
Part Number | PTFB191501F |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermall... |
Features |
include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB191501E Package H-36248-2
PTFB191501F Package H-37248-2
PTFB191501E PTFB191501F
IMD (dBc)
Efficiencydiscontinu(%)ed products
Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
-20 40
-25
Efficiency
35
-30
IMD Up
30
-35 25
-40 20
-45 15 IMD Low
-50 10
-55
AC... |
Document |
PTFB191501F Data Sheet
PDF 322.39KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PTFB191501E |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FETs | |
2 | PTFB192503EL |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FETs | |
3 | PTFB192503FL |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FETs | |
4 | PTFB193404F |
Infineon |
Thermally-Enhanced High Power RF LDMOS FETs | |
5 | PTFB182503EL |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FETs | |
6 | PTFB182503FL |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FETs |