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PTF211802E |
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| Part Number | PTF211802E |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device l... |
| Features |
• • Broadband internal matching Typical two –carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 = –37 dBc - ACPR < –42 dBc Typical CW performance - Output power at P –1dB = 180 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power Two –Carrier WCDMA Drive –Up VDD = 28 V, IDQ = 2.0 A, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 3.84 MHz BW 35 -30 • • Efficiency (%), Gain (dB) 30 25 20 15 10 -35 IMD (... |
| Document |
 PTF211802E Data Sheet
PDF 169.15KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PTF211802 |
Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
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| 2 | PTF211802A |
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LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
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| 3 | PTF211301 |
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LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
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| 4 | PTF211301A |
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LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
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| 5 | PTF210301 |
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LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
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| 6 | PTF210301A |
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LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
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Desde 2024. D4U Semiconductor.
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