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Inchange Semiconductor |
Silicon NPN Power Transistors otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 50mA; IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 1mA; IC=0 VCE(sat) Collector-Emitter S |
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Inchange Semiconductor |
Silicon NPN Power Transistor ARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= |
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Inchange Semiconductor |
Silicon NPN Power Transistor lector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICEO Collector Cutoff |
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Inchange Semiconductor |
Silicon NPN Power Transistor BOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 hFE1 DC Current Gain IC= 2A; VCE= 5V hFE2 |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistor RISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO VCE(sat) VBE(sat) ICEO ICBO hFE Emitter-Base B |
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Inchange Semiconductor |
Silicon NPN Power Transistor Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICEO Collector Cut |
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Inchange Semiconductor |
Silicon NPN Power Transistor lector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICEO Collector Cutoff |
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Inchange Semiconductor |
Silicon NPN Power Transistor R)CEO Collector-Emitter Breakdown Voltage IC= 3mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 3mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.75A; IB= 0.38A ICEO Col |
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Inchange Semiconductor |
Silicon NPN Power Transistor R)CEO Collector-Emitter Breakdown Voltage IC= 3mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 3mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.75A; IB= 0.38A ICEO Col |
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Inchange Semiconductor |
Silicon NPN Power Transistor R)CEO Collector-Emitter Breakdown Voltage IC= 3mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 3mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.75A; IB= 0.38A ICEO Col |
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Inchange Semiconductor |
Silicon NPN Power Transistor ified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturati |
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Inchange Semiconductor |
Silicon NPN Power Transistor BOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage |
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Inchange Semiconductor |
Silicon NPN Power Transistor ess otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collecto |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistor Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A ICEO Collec |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistor Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICEO Collector Cut |
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Inchange Semiconductor |
Silicon NPN Power Transistor PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= |
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Desde 2024. D4U Semiconductor.
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