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3DD15A |
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| Part Number | 3DD15A |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A APPLICATIONS ·Designed ... |
| Features |
ified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A
ICEO Collector Cutoff Current
VCE= 30V; IB=0
ICBO Collector Cutoff Current
VCB= 30V; IE=0
hFE DC Current Gain
IC= 2A; VCE= 10V
tf Fall Time
IC= 3A; IB1= 0.2A, IB2= -0.3A,
MIN MAX UNIT 60 V 80 V 5V
1.5 V 1.0 mA 0.5 mA 30 250 1.0 μs
isc website：www.iscsemi.cn
2
... |
| Document |
 3DD15A Data Sheet
PDF 185.32KB |
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Desde 2024. D4U Semiconductor.
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