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| Part Number | 3DD8A |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A APPLICATIONS ·Designed for power amplifier, low speed switching and regula... |
| Features |
lector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
ICEO Collector Cutoff Current
VCE= 20V; IB= 0
hFE DC Current Gain
IC= 5A; VCE= 5V
MIN TYP. MAX UNIT 30 V 5V 30 V
2.0 V 2.0 mA 10
isc website：www.iscsemi.cn
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| Document |
 3DD8A Data Sheet
PDF 184.81KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD880 |
INCHANGE |
NPN Transistor |
|
| 2 | 3DD880X |
INCHANGE |
NPN Transistor |
|
| 3 | 3DD8B |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 3DD8C |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | 3DD8D |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | 3DD8E |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
Desde 2024. D4U Semiconductor.
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