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3DD155 |
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| Part Number | 3DD155 |
| Manufacturer | Inchange Semiconductor |
| Description | ·DC Current Gain : hFE= 15-120@IC= 1A ·Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI... |
| Features |
RISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO VCE(sat) VBE(sat)
ICEO ICBO hFE
Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain
IE= 1mA; IC= 0 IC= 1.0A; IB= 0.1A IC= 1.0A ;IB= 0.1A VCE=V(BR)CEO; IB=0 VCB= V(BR)CBO; IE=0 IC= 1A; VCE= 5V
MIN MAX UNIT
A
50
B
100
C
150
V
D
200
E
250
F
300
A
80
B
150
C
200
V... |
| Document |
 3DD155 Data Sheet
PDF 256.38KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD15 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 3DD1545 |
Huajing Microelectronics |
NPN Transistor |
|
| 3 | 3DD1555 |
JILIN SINO |
CASE-RATED BIPOLAR TRANSISTOR |
|
| 4 | 3DD1555A |
JILIN SINO |
CASE-RATED BIPOLAR TRANSISTOR |
|
| 5 | 3DD1555P |
JILIN SINO |
CASE-RATED BIPOLAR TRANSISTOR |
|
| 6 | 3DD157 |
ETC |
Low-frequency silicon NPN power transistor |
|
Desde 2024. D4U Semiconductor.
|