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3DD207 |
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| Part Number | 3DD207 |
| Manufacturer | Inchange Semiconductor |
| Description | ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION... |
| Features |
otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVCBO Collector-Base Sustaining Voltage IC= 50mA; IE= 0
BVCEO Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0
BVEBO Emitter-Base Sustaining Voltage
IE= 1mA; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB=60V; IE= 0
IEBO
Collector Cutoff Current
VCB=6V; IC= 0
hFE
DC Current Gain
IC= 2A; VCE= 5V
MIN MAX UNIT
60
V
60
V
6
V
1.0
V
1.5
V
0.5
mA
0.1
mA
40
250
NOTICE： ISC reserves the rights to make... |
| Document |
 3DD207 Data Sheet
PDF 193.18KB |
Desde 2024. D4U Semiconductor.
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