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3DD8D |
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| Part Number | 3DD8D |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable... |
| Features |
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
ICEO
Collector Cutoff Current
VCE= 20V; IB= 0
hFE
DC Current Gain
IC= 5A; VCE= 5V
3DD8D
MIN TYP. MAX UNIT
110
V
5
V
110
V
2.0
V
2.0 mA
10
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide ... |
| Document |
 3DD8D Data Sheet
PDF 201.57KB |
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Desde 2024. D4U Semiconductor.
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