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3DD7B |
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| Part Number | 3DD7B |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS ·Designed for power amplifier, low speed switching and ... |
| Features |
R)CEO Collector-Emitter Breakdown Voltage IC= 3mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 2mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 3mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.75A; IB= 0.38A
ICEO Collector Cutoff Current
VCE= 30V; IB= 0
hFE DC Current Gain
IC= 3.75A; VCE= 10V
MIN TYP. MAX UNIT 100 V
5V 150 V
1.2 V 1.0 mA 15 180
isc website：www.iscsemi.cn
2
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| Document |
 3DD7B Data Sheet
PDF 185.22KB |
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Desde 2024. D4U Semiconductor.
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