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3DD102A |
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| Part Number | 3DD102A |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A ·Minimum Lot-to-Lot variati... |
| Features |
ARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A
ICEO
Collector Cutoff Current
VCE= 50V; IB=0
ICBO
Collector Cutoff Current
VCB= 50V; IE=0
hFE
DC Current Gain
IC= 2A; VCE= 5V
fT
Bandwidth Product
IC=0.5A ; VCE= 10V
3DD102A
MIN MAX UNIT
150
V
100
V
5
V
0.8
V
2.0 mA
1.0 mA
20
1
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the... |
| Document |
 3DD102A Data Sheet
PDF 209.11KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD102 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |
|
| 2 | 3DD102 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | 3DD102B |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 3DD102C |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | 3DD102D |
INCHANGE |
NPN Transistor |
|
| 6 | 3DD10 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |
|
Desde 2024. D4U Semiconductor.
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