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INCHANGE |
NPN Transistor sc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-E |
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INCHANGE |
NPN Transistor emi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB=0 VCE(sat) |
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INCHANGE |
PNP Transistor m 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ; IB=0 VCE(sat) Colle |
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INCHANGE |
NPN Transistor c & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB=0 VCE(sat) Collector-Emi |
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Inchange Semiconductor |
Silicon NPN Power Transistor Emitter Cutoff Current VEB=5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 2V hFE-2 DC Current Gain IC= 1A ; VCE= 2V hFE-1 Classifications A B 50-150 100-300 BD107 MIN TYP. MAX UNIT 60 V 1.0 V 0.5 μA 0.5 μA 50 300 35 NOTICE： |
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INCHANGE |
NPN Transistor SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA; IB=0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(on) Base-Emitter On Voltage |
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INCHANGE |
NPN Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3 |
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Inchange Semiconductor |
Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB=0 -45 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -0.05A -0.5 V VBE(on) Base-E |
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INCHANGE |
NPN Transistor 131 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VCE(sat)-2 Collector |
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INCHANGE |
PNP Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat)-1 Base-Emitter Saturation Voltage IC |
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INCHANGE |
PNP Transistor isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor BD140 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emi |
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INCHANGE |
PNP Transistor m 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ; IB=0 VCE(sat) Colle |
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INCHANGE |
NPN Transistor S TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1 |
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INCHANGE |
NPN Transistor stor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Bre |
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INCHANGE |
NPN Transistor stor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Bre |
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INCHANGE |
NPN Transistor stor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Bre |
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INCHANGE |
PNP Transistor tor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(on) Base-Emitter |
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INCHANGE |
NPN Transistor TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 140 V VCE(sat) -1 Collector-E |
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INCHANGE |
NPN Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A |
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INCHANGE |
NPN Transistor cified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(sat) Base-Emitter Satu |
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Desde 2024. D4U Semiconductor.
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