Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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BD178 |
| Part Number | BD178 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·DC Current Gain- : hFE= 40-250(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -60V(Min) ·Complement to type BD177 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications. A. |
| Features | tor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -2V ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gai. |
BD178 |
| Part Number | BD178 |
| Manufacturer | CDIL |
| Title | EPITAXIAL SILICON POWER TRANSISTORS |
| Description | Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC ICM PD PD Tj, Tstg BD175 BD176 45 45 . |
| Features | . |
BD178 |
| Part Number | BD178 |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP Epitaxial Silicon Transistor |
| Description | BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter *Collector-Base Voltage : . |
| Features | On Voltage Current Gain Bandwidth Product Test Condition IC = - 100mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 100 - 100 -1 40 15 250 - 0.8 - 1.3 3 V V MHz Typ. Max. Units V V V µA µA µA mA ICBO VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 150mA VCE = - 2V, IC = - 1A IC = -1 A , IB = - 0.1A VCE = - 2V, IC = -1 A VCE = -10V, IC = - 250mA IEBO hFE1. |
BD178 |
| Part Number | BD178 |
| Manufacturer | TRANSYS |
| Title | EPITAXIAL SILICON POWER TRANSISTORS |
| Description | Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC ICM PD PD Tj, Tstg BD175 BD176 45 45 . |
| Features | . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD170 |
CDIL |
PNP PLASTIC POWER TRANSISTORS |
|
| 2 | BD1722N5050AHF |
Anaren Microwave |
Ultra Low Profile 0404 Balun |
|
| 3 | BD175 |
TRANSYS |
EPITAXIAL SILICON POWER TRANSISTORS |
|
| 4 | BD175 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 5 | BD175 |
CDIL |
EPITAXIAL SILICON POWER TRANSISTORS |
|
| 6 | BD175 |
SavantIC |
(BD175 - BD179) SILICON POWER TRANSISTOR |
|
| 7 | BD175 |
INCHANGE |
NPN Transistor |
|
| 8 | BD1754HFN |
ROHM |
Constant Current LED Driver |
|
| 9 | BD176 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 10 | BD176 |
CDIL |
EPITAXIAL SILICON POWER TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
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