Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
BD142 |
| Part Number | BD142 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Low Collector Saturation Voltage ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·LF large signal power amplification. ·Intended for a wide variety of intermediate power applications. ·Suited for use in audio and inverter circ. |
| Features | SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA; IB=0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 4A; VCE= . |
BD142 |
| Part Number | BD142 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3 package ·Low collector saturation voltage ·High dissipation rating APPLICATIONS ·LF large signal power amplification ·Intended for a wide variety of intermediate power applications. ·Suited for use in audio and inverter circuits at 12V PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simp. |
| Features | Power Transistors BD142 CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=200mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD140 |
STMicroelectronics |
Transistor |
|
| 2 | BD140 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 3 | BD140 |
ON Semiconductor |
Plastic Medium Power Silicon PNP Transistor |
|
| 4 | BD140 |
Toshiba |
Silicon PNP Transistor |
|
| 5 | BD140 |
UTC |
PNP SILICON TRANSISTOR |
|
| 6 | BD140 |
INCHANGE |
PNP Transistor |
|
| 7 | BD140 |
Toshiba |
SILICON PNP Transistor |
|
| 8 | BD140-10 |
Motorola Inc |
Plastic Medium Power Silicon PNP Transistor |
|
| 9 | BD14000EFV-C |
Rohm |
Cell Balance LSI of 4 to 6 Series Power Storage Element Cells |
|
| 10 | BD140G |
ON Semiconductor |
Plastic Medium-Power Silicon PNP Transistors |
|
Desde 2024. D4U Semiconductor.
|