Distributor | Stock | Price | Buy |
---|
BD140 |
Part Number | BD140 |
Manufacturer | UTC |
Title | PNP SILICON TRANSISTOR |
Description | The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. The complementary NPN types are the BD135/BD137/ BD139. 11 SOT-223 TO-251 11 TO-126 TO-126C ORDERING INFORMATION O. |
Features | .unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., LTD 1 of 4 QW-R204-013.E BD136-138-140 MARKING PACKAGE BD136 SOT-223 - TO-251 TO-126 TO-126C PNP EPITAXIAL SILICON TRANSISTOR MARKING BD138 BD140 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R204-013.E BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UN. |
BD140 |
Part Number | BD140 |
Manufacturer | Toshiba |
Title | Silicon PNP Transistor |
Description | BD136 BD138 IBD140I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD135, BD137 and BD139 7.9 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage BD136 BD138 BD140 VCBO Collecto. |
Features | . Designed for Complementary Use with BD135, BD137 and BD139 7.9 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage BD136 BD138 BD140 VCBO Collector-Emitter Voltage BD136 BD138 BD140 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25°C Tc^60°C VcEO VEBO ic ICM Junction Temperature Storage Temperature Range L stg R. |
BD140 |
Part Number | BD140 |
Manufacturer | ON Semiconductor |
Title | Plastic Medium Power Silicon PNP Transistor |
Description | TO−126−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semicondu. |
Features | ector 3 Base MARKING DIAGRAM YWW BD1XX Y WW BD1XX XX = Year = Work Week = Specific Device Code = 36, 38, 40 ORDERING INFORMATION Device BD13610STU BD13610S BD13616STU BD13616S BD13810STU BD13816STU BD14010STU BD14016STU BD14016S Package Shipping 60 Units/ Tube 500 Units/ Bulk Box 60 Units/ Tube TO−126 (Pb−Free) 500 Units/ Bulk Box 60 Units/ Tube 60 Units/ Tube 60 Units/ Tube 60 Uni. |
BD140 |
Part Number | BD140 |
Manufacturer | Fairchild Semiconductor |
Title | PNP Epitaxial Silicon Transistor |
Description | BD136 / BD138 / BD140 — PNP Epitaxial Silicon Transistor March 2015 BD136 / BD138 / BD140 PNP Epitaxial Silicon Transistor Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Pa. |
Features |
• Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13610S BD13610STU BD13616S BD13616STU BD13810STU BD13816STU BD14010STU BD14016S BD14016STU Marking BD136-10 BD136-10 BD136-16 BD136-16 BD138-10 BD138-16 BD140-10 BD140-16 BD140-16 Package TO-126 3L TO-126 3L TO-126 3L TO-. |
BD140 |
Part Number | BD140 |
Manufacturer | Toshiba |
Title | SILICON PNP Transistor |
Description | BD136 BD138 IBD140I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD135, BD137 and BD139 7.9 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage BD136 BD138 BD140 VCBO Collecto. |
Features | . Designed for Complementary Use with BD135, BD137 and BD139 7.9 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage BD136 BD138 BD140 VCBO Collector-Emitter Voltage BD136 BD138 BD140 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25°C Tc^60°C VcEO VEBO ic ICM Junction Temperature Storage Temperature Range L stg R. |
BD140 |
Part Number | BD140 |
Manufacturer | INCHANGE |
Title | PNP Transistor |
Description | ·DC Current Gain- : hFE= 63(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -80V(Min) ·Complement to type BD139 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as audio amplifiers and drivers utilizing compleme. |
Features | isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor BD140 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(on) Base-Emitter On Voltage ICBO C. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BD140-10 |
Motorola Inc |
Plastic Medium Power Silicon PNP Transistor | |
2 | BD14000EFV-C |
Rohm |
Cell Balance LSI of 4 to 6 Series Power Storage Element Cells | |
3 | BD140G |
ON Semiconductor |
Plastic Medium-Power Silicon PNP Transistors | |
4 | BD141 |
INCHANGE |
NPN Transistor | |
5 | BD142 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | BD142 |
Comset Semiconductors |
NPN Silicon Transistor | |
7 | BD142 |
INCHANGE |
NPN Transistor | |
8 | BD145 |
INCHANGE |
NPN Transistor | |
9 | BD1482EFJ |
Rohm |
Synchronous Buck Converter integrated FET | |
10 | BD1484EFJ |
Rohm |
Synchronous Buck Converter integrated FET |