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BD140 |
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| Part Number | BD140 |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain- : hFE= 63(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -80V(Min) ·Complement to type BD139 ·Minimum Lot-to-Lot variations for robust device performance and r... |
| Features |
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
BD140
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ; IB=0
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= -0.5A; VCE= -2V
VCB= -30V; IE= 0 VCB= -30V; IE= 0,TC=125℃
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -5mA ; VCE= -2V
hFE-2
DC Current Gain... |
| Document |
 BD140 Data Sheet
PDF 210.95KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD140 |
STMicroelectronics |
Transistor |
|
| 2 | BD140 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 3 | BD140 |
ON Semiconductor |
Plastic Medium Power Silicon PNP Transistor |
|
| 4 | BD140 |
Toshiba |
Silicon PNP Transistor |
|
| 5 | BD140 |
UTC |
PNP SILICON TRANSISTOR |
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| 6 | BD140 |
Toshiba |
SILICON PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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