Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
BD137 |
| Part Number | BD137 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Vol. |
| Features | . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25 C Tc^60 C Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO Vebo I CM RATING 45 . |
BD137 |
| Part Number | BD137 |
| Manufacturer | Unisonic Technologies |
| Title | NPN POWER TRANSISTORS |
| Description | , at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R204-033.C . |
| Features | * High current (max.1.5A) * Low voltage (max.60V) 1 SOT-223 1 TO-126 ORDERING INFORMATION Ordering Number Lead Free Halogen Free BD137L-x-AA3-R BD137G-x-AA3-R BD137L-xx-T60-K BD137G-xx-T60-K Package SOT-223 TO-126 Pin Assignment 1 2 3 B C E E C B Packing Tape Reel Bulk BD137G-xx-AA3-R (1)Packing Type (2)Package Type (3)Rank (4)Green Package MARKING SOT-223 (1) R: Tap. |
BD137 |
| Part Number | BD137 |
| Manufacturer | Central Semiconductor |
| Title | NPN SILICON TRANSISTOR |
| Description | The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Contin. |
| Features | =30V, TC=125°C 10 IEBO VEB=5.0V 100 BVCEO IC=30mA (BD135) 45 BVCEO IC=30mA (BD137) 60 BVCEO IC=30mA (BD139) 80 VCE(SAT) IC=500mA, IB=50mA 0.5 VBE(ON) VCE=2.0V, IC=500mA 1.0 hFE VCE=2.0V, IC=5.0mA 40 hFE VCE=2.0V, IC=150mA 63 250 hFE VCE=2.0V, IC=500mA 25 fT VCE=5.0V, IC=50mA, f=100MHz 190 UNITS nA µA nA V V V V . |
BD137 |
| Part Number | BD137 |
| Manufacturer | ON Semiconductor |
| Title | NPN Epitaxial Silicon Transistor |
| Description | BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S B. |
| Features |
• Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD13916STU BD13910S BD13916S BD1396STU BD13910STU Marking BD135-16 BD135-6 BD135-10 BD135-16 BD137-16 BD137-10 BD137-16 BD139-16 BD139-10 BD139-16 BD139. |
BD137 |
| Part Number | BD137 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Epitaxial Silicon Transistor |
| Description | BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor August 2013 Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Numb. |
| Features |
• Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD13916STU BD13910S BD13916S BD1396STU BD13910STU Marking BD135-16 BD135-6 BD135-10 BD135-16 BD137-16 BD137-10 BD137-16 BD139-16 BD139-10 BD139-16 BD139. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD130 |
Comset Semiconductors |
NPN Silicon Transistor |
|
| 2 | BD130 |
Solitron Devices |
NPN Silicon Power |
|
| 3 | BD13003B |
SeCoS |
NPN Plastic Encapsulated Transistor |
|
| 4 | BD131 |
INCHANGE |
NPN Transistor |
|
| 5 | BD131 |
NXP |
NPN power transistor |
|
| 6 | BD131 |
Comset Semiconductors |
SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
|
| 7 | BD132 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | BD132 |
Comset Semiconductors |
SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
|
| 9 | BD132 |
INCHANGE |
PNP Transistor |
|
| 10 | BD1321G |
ROHM |
Ground Sense Low Power General Purpose Operational Amplifiers |
|
Desde 2024. D4U Semiconductor.
|