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BD132 |
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| Part Number | BD132 |
| Manufacturer | SavantIC |
| Description | ·Complement to type BD131 ·With TO-126 package ·High current (Max:- 3A) ·Low voltage (Max: -45V) APPLICATIONS ·For general purpose power applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IBM Pt Tj Tstg PARAMETER Collector-base voltage Collector-emitter . |
| Features | ransistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=-0.5A; IB=-50mA IC=-2A; IB=-0.2A IC=-0.5A; IB=-50mA IC=-2A; IB=-0.2A VCB=-50V; IE=0 ICBO Collector cut-off current VCB=-50V; IE=0 Tj=150 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency VEB=-5V; IC=0 IC=-0.5A ; VCE=-12V IC=-2A ; VCE=-1V IC=-0.25A; VCE=-5V ;f=100MHz 40 20 60 MIN TYP. www.datasheet4u.com BD132 SYMBOL VCEsat-1 VC. |
| Datasheet |
 BD132 Data Sheet
PDF 136.96KB |
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BD132 |
| Part Number | BD132 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | isc Silicon PNP Power Transistor ESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= -45V(Min.) ·Complement to type BD131 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium powe. |
| Features | TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat)-1 Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= -2A; IB= -0.2A VCB= . |
BD132 |
| Part Number | BD132 |
| Manufacturer | Comset Semiconductors |
| Title | SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
| Description | PNP BD132 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD132 are PNP transistors mounted in Jedec TO-126 plastic package. Medium power applications. PNP complements are BD131 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol -VCEO -VCBO -VEBO IC IB PT TJ TStg Ratings Collector-Emitter Voltage . |
| Features | r cut-offcurrent IC=0, -VEB=3 V Collector-Emitter saturation -IC=0.5 A, -IB=50 mA Voltage -IC=2.0 A, -IB=200 mA -IC=0.5 A, -IB=50 mA Base-Emitter saturation Voltage -IC=2.0 A, -IB=200 mA -VCE=12 V, -IC=500m A DC Current Gain -VCE=1 V, -IC=2 A 18/10/2012 COMSET SEMICONDUCTORS 1|2 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BD132 MECHANICAL DATA CASE TO-126 DIMENSIONS min 7.4 10.5 2.4 0.. |
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|---|---|---|---|---|
| 1 | BD130 |
Comset Semiconductors |
NPN Silicon Transistor |
|
| 2 | BD130 |
Solitron Devices |
NPN Silicon Power |
|
| 3 | BD13003B |
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| 4 | BD131 |
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| 5 | BD131 |
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| 6 | BD131 |
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| 7 | BD1321G |
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| 8 | BD134 |
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| 9 | BD135 |
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| 10 | BD135 |
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Desde 2024. D4U Semiconductor.
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