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BD131 |
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| Part Number | BD131 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | handbook, halfpage BD131 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complement: BD132. 3 2 1 1 2 3 Top view MAM254 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating S. |
| Features |
• High current (max. 3 A) • Low voltage (max. 45 V). APPLICATIONS • General purpose power applications. DESCRIPTION handbook, halfpage BD131 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complement: BD132. 3 2 1 1 2 3 Top view MAM254 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter volta. |
| Datasheet |
 BD131 Data Sheet
PDF 43.96KB |
| Distributor | Stock | Price | Buy |
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BD131 |
| Part Number | BD131 |
| Manufacturer | Comset Semiconductors |
| Title | SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
| Description | NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD131are NPN transistors mounted in Jedec TO-126 plastic package. Medium power applications. PNP complements are BD132 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC IB PT TJ TStg Ratings Collector-Emitter Voltage Coll. |
| Features | C=0, VEB=3 V Collector-Emitter saturation IC=0.5 A, IB=50 mA Voltage IC=2.0 A, IB=200 mA IC=0.5 A, IB=50 mA Base-Emitter saturation Voltage IC=2.0 A, IB=200 mA VCE=12 V, IC=500m A DC Current Gain VCE=1 V, IC=2 A COMSET SEMICONDUCTORS 18/10/2012 1|2 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BD131 MECHANICAL DATA CASE TO-126 DIMENSIONS min 7.4 10.5 2.4 0.7 2.25 typ. 0.49 0.75 4.4 typ. 1. |
BD131 |
| Part Number | BD131 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·DC Current Gain- : hFE= 40(Min)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 45V(Min.) ·Complement to type BD132 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power and general purpose applications. ABSOLUTE M. |
| Features | 131 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(sat)-2 Base-Emitter Saturation Volta. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD130 |
Comset Semiconductors |
NPN Silicon Transistor |
|
| 2 | BD130 |
Solitron Devices |
NPN Silicon Power |
|
| 3 | BD13003B |
SeCoS |
NPN Plastic Encapsulated Transistor |
|
| 4 | BD132 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | BD132 |
Comset Semiconductors |
SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
|
| 6 | BD132 |
INCHANGE |
PNP Transistor |
|
| 7 | BD1321G |
ROHM |
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|
| 8 | BD134 |
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Silicon PNP Power Transistor |
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| 9 | BD135 |
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| 10 | BD135 |
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