BD130 |
Part Number | BD130 |
Manufacturer | Comset Semiconductors |
Description | BD130 S w w w .D a t a h t e e 4U . m o c NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VCE. |
Features |
Collector-Emitter Breakdown Voltage ( *) IC=200 mA, IB=0 60 V VCE(SAT) Collector-Emitter Saturation IC=4 A, IB=0.4 A Voltage ( *) - 0.5 1.1 V ICEX Collector-Emitter Cutoff Current VCE=100 V VBE=-1.5 V - - 0.5 mA VCE=100 V VBE=-1.5 V TCASE=150°C - - 30 IEBO Emitter-Base Cutoff Current VEB=7 V - - 5.0 mA VBE Base-Emitter Voltage ( *) IC=4.0 A, VCE=4.0V - 0.95 1.8 V fT Transition Frequency IC=0.1 A, VCE=4 V 1.1 MHz COMSET SEMICONDUCTORS 2/3 BD130 Symbol Ratings Test Condition(s) Min Typ Mx Unit h21E Static Forward Current Transfer Ratio ( *) VCE=4.0 V, I. |
Datasheet |
BD130 Data Sheet
PDF 167.82KB |
Distributor | Stock | Price | Buy |
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BD130 |
Part Number | BD130 |
Manufacturer | Solitron Devices |
Title | NPN Silicon Power |
Description | w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c . |
Features | . |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BD13003B |
SeCoS |
NPN Plastic Encapsulated Transistor | |
2 | BD131 |
INCHANGE |
NPN Transistor | |
3 | BD131 |
NXP |
NPN power transistor | |
4 | BD131 |
Comset Semiconductors |
SILICON PLANAR EPITAXIAL POWER TRANSISTORS | |
5 | BD132 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | BD132 |
Comset Semiconductors |
SILICON PLANAR EPITAXIAL POWER TRANSISTORS | |
7 | BD132 |
INCHANGE |
PNP Transistor | |
8 | BD1321G |
ROHM |
Ground Sense Low Power General Purpose Operational Amplifiers | |
9 | BD134 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
10 | BD135 |
STMicroelectronics |
Complementary low-voltage transistor |