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BD131 |
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| Part Number | BD131 |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain- : hFE= 40(Min)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 45V(Min.) ·Complement to type BD132 ·Minimum Lot-to-Lot variations for robust device performance and relia... |
| Features |
131
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 0.5A; IB= 50mA
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 2A; IB= 0.2A
VCB= 40V; IE= 0 VCB= 40V; IE= 0,TC=150℃
VEB= 3V; IC=0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 12V
hFE-2
DC Current ... |
| Document |
 BD131 Data Sheet
PDF 203.77KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD130 |
Comset Semiconductors |
NPN Silicon Transistor |
|
| 2 | BD130 |
Solitron Devices |
NPN Silicon Power |
|
| 3 | BD13003B |
SeCoS |
NPN Plastic Encapsulated Transistor |
|
| 4 | BD131 |
NXP |
NPN power transistor |
|
| 5 | BD131 |
Comset Semiconductors |
SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
|
| 6 | BD132 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | BD132 |
Comset Semiconductors |
SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
|
| 8 | BD132 |
INCHANGE |
PNP Transistor |
|
| 9 | BD1321G |
ROHM |
Ground Sense Low Power General Purpose Operational Amplifiers |
|
| 10 | BD134 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
Desde 2024. D4U Semiconductor.
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