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BD137 |
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| Part Number | BD137 |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 60V(Min) ·Complement to type BD138 ·Minimum Lot-to-Lot variations for robust device performance and rel... |
| Features |
c & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 0.5A; VCE= 2V
VCB= 30V; IE= 0 VCB= 30V; IE= 0,TC=125℃
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 5mA ; VCE= 2V
hFE-2
DC Current Gain
IC= 0.5A ; VCE= 2V
hFE-3
DC Current Gain
IC= 0.15A ; VCE= 2V
BD137
... |
| Document |
 BD137 Data Sheet
PDF 203.43KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD130 |
Comset Semiconductors |
NPN Silicon Transistor |
|
| 2 | BD130 |
Solitron Devices |
NPN Silicon Power |
|
| 3 | BD13003B |
SeCoS |
NPN Plastic Encapsulated Transistor |
|
| 4 | BD131 |
INCHANGE |
NPN Transistor |
|
| 5 | BD131 |
NXP |
NPN power transistor |
|
| 6 | BD131 |
Comset Semiconductors |
SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
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