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BD139 Silicon NPN Transistor Datasheet


BD139

Toshiba
BD139
Part Number BD139
Manufacturer Toshiba (https://www.toshiba.com/)
Title Bipolar Transistors - BJT 1.5A 80V 12.5W NPN
Description SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with...
Features . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25...

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Distributor Distributor
Mouser Electronics
All other distributors
Stock 5550 In Stock
Price
1 units: 0.51 USD
10 units: 0.444 USD
100 units: 0.308 USD
500 units: 0.275 USD
BuyNow BuyNow Buy Now (Manufacturer a onsemi BD139G)



BD139

Fairchild Semiconductor
BD139
Part Number BD139
Manufacturer Fairchild Semiconductor
Title NPN Epitaxial Silicon Transistor
Description BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor August 2013 Features • Complement to BD.
Features
• Complement to BD136, BD138 and BD140 respectively Applications
• Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD13916STU BD13910S BD13916S BD1396STU BD13910STU Ma.

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BD139

INCHANGE
BD139
Part Number BD139
Manufacturer INCHANGE
Title NPN Transistor
Description ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 80V(Min) ·Complement to type BD140 ·Minimum Lot-t.
Features sc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(.

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BD139

UTC
BD139
Part Number BD139
Manufacturer UTC
Title NPN POWER TRANSISTORS
Description , at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNO.
Features * High current (max.1.5A) * Low voltage (max.80V) 11 SOT-223 TO-251 1 1 TO-126S TO-126  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package BD139L-xx-AA3-R BD139G-xx-AA3-R SOT-223 BD139L-xx-TM3-T BD139G-xx-TM3-T TO-251 BD139L-xx-T60-K BD139G-xx-T60-K TO-126 BD139.

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BD139

STMicroelectronics
BD139
Part Number BD139
Manufacturer STMicroelectronics
Title Complementary low-voltage transistor
Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complem.
Features
■ Products are pre-selected in DC current gain Application
■ General purpose Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD1.

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BD139

CDIL
BD139
Part Number BD139
Manufacturer CDIL
Title NPN EPITAXIAL SILICON POWER TRANSISTORS
Description Collector -Emitter Voltage Collector -Emitter Voltage (RBE=1kΩ) Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Curr.
Features Sustaining Voltage *VCEO (sus) IC=30mA, IB=0 BD135 BD137 BD139 Collector Cut off Current ICBO VCB=30V, IE=0 VCB=30V, IE=0, Tc=125ºC Emitter Cut off Current IEBO VEB=5V, IC=0 DC Current Gain *hFE IC=0.005A, VCE=2V IC=0.15A, VCE=2V IC=0.5A, VCE=2V *Pulse test:- Pulse width=300µs, duty c.

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