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BD139 |
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| Part Number | BD139 |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 80V(Min) ·Complement to type BD140 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATIN. |
| Features | sc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 0.5A; VCE= 2V VCB= 30V; IE= 0 VCB= 30V; IE= 0,TC=125℃ VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 5mA ; VCE= 2V hFE-2 DC Current Gain IC= 0.5A ; VCE= 2V hFE-3 DC Current Gain IC= 0.15A ; VCE= 2V BD1. |
| Datasheet |
 BD139 Data Sheet
PDF 203.72KB |
| Distributor | Stock | Price | Buy |
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BD139 |
| Part Number | BD139 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Vol. |
| Features |
. Designed for Complementary Use with BD136, BD138
and BD140.
7.9MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
BD135 BD137 BD139
Collector-Emitter Voltage
BD135 BD137 BD139
Emitter-Base Voltage
Collector Current
DC Peak
Collector Power Dissipation
Ta=25 C Tc^60 C
Junction Temperature
Storage Temperature Range
SYMBOL VCBO
v CEO Vebo I CM
RATING 45 . |
BD139 |
| Part Number | BD139 |
| Manufacturer | STMicroelectronics |
| Title | Complementary low-voltage transistor |
| Description | These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. 1 2 3 SOT-32 Figu. |
| Features |
■ Products are pre-selected in DC current gain Application ■ General purpose Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. 1 2 3 SOT-32 Figure 1. Inter. |
BD139 |
| Part Number | BD139 |
| Manufacturer | UTC |
| Title | NPN POWER TRANSISTORS |
| Description | , at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R204-007.G . |
| Features |
* High current (max.1.5A) * Low voltage (max.80V)
11
SOT-223
TO-251
1 1
TO-126S
TO-126
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
BD139L-xx-AA3-R
BD139G-xx-AA3-R
SOT-223
BD139L-xx-TM3-T
BD139G-xx-TM3-T
TO-251
BD139L-xx-T60-K
BD139G-xx-T60-K
TO-126
BD139L-xx-T6S-K
BD139G-xx-T6S-K
TO-126S
Note: Pin Assignment: E: Emitter C: Collector B: Base
Pin Ass. |
BD139 |
| Part Number | BD139 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Epitaxial Silicon Transistor |
| Description | BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor August 2013 Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Numb. |
| Features |
• Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD13916STU BD13910S BD13916S BD1396STU BD13910STU Marking BD135-16 BD135-6 BD135-10 BD135-16 BD137-16 BD137-10 BD137-16 BD139-16 BD139-10 BD139-16 BD139. |
BD139 |
| Part Number | BD139 |
| Manufacturer | ON Semiconductor |
| Title | NPN Epitaxial Silicon Transistor |
| Description | BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S B. |
| Features |
• Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD13916STU BD13910S BD13916S BD1396STU BD13910STU Marking BD135-16 BD135-6 BD135-10 BD135-16 BD137-16 BD137-10 BD137-16 BD139-16 BD139-10 BD139-16 BD139. |
BD139 |
| Part Number | BD139 |
| Manufacturer | CDIL |
| Title | NPN EPITAXIAL SILICON POWER TRANSISTORS |
| Description | Collector -Emitter Voltage Collector -Emitter Voltage (RBE=1kΩ) Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Power Dissipation @ Tc=70ºC Operating And Sto. |
| Features |
Sustaining Voltage
*VCEO (sus)
IC=30mA, IB=0 BD135
BD137
BD139
Collector Cut off Current
ICBO
VCB=30V, IE=0
VCB=30V, IE=0, Tc=125ºC
Emitter Cut off Current
IEBO
VEB=5V, IC=0
DC Current Gain
*hFE IC=0.005A, VCE=2V IC=0.15A, VCE=2V IC=0.5A, VCE=2V
*Pulse test:- Pulse width=300µs, duty cycle=2%
MIN 45 60 80
25 40 25
BD139 80 100 100
UNIT V V V V A A A W
mW/ºC W
mW/ºC W
ºC
ºC/W ºC/W. |
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Desde 2024. D4U Semiconductor.
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