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BD139 |
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| Part Number | BD139 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM... |
| Features |
. Designed for Complementary Use with BD136, BD138
and BD140.
7.9MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
BD135 BD137 BD139
Collector-Emitter Voltage
BD135 BD137 BD139
Emitter-Base Voltage
Collector Current
DC Peak
Collector Power Dissipation
Ta=25 C Tc^60 C
Junction Temperature
Storage Temperature Range
SYMBOL VCBO
v CEO Vebo I CM
RATING 45 60 80 45 60 80
0.5 1.5
PC L stg
6.5 150
-55-150
UNIT
1. EMITTER Z. COLLECTOR (HEAT S INK) Z. BASE
TO— 126
TOSHIBA
2-8P1A
Weight : 0.72g
ELECTRICAL CHARACTERISTICS (Ta=25 C)
CHARACTERISTIC
SY... |
| Document |
 BD139 Data Sheet
PDF 101.44KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD130 |
Comset Semiconductors |
NPN Silicon Transistor |
|
| 2 | BD130 |
Solitron Devices |
NPN Silicon Power |
|
| 3 | BD13003B |
SeCoS |
NPN Plastic Encapsulated Transistor |
|
| 4 | BD131 |
INCHANGE |
NPN Transistor |
|
| 5 | BD131 |
NXP |
NPN power transistor |
|
| 6 | BD131 |
Comset Semiconductors |
SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
|
| 7 | BD132 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | BD132 |
Comset Semiconductors |
SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
|
| 9 | BD132 |
INCHANGE |
PNP Transistor |
|
| 10 | BD1321G |
ROHM |
Ground Sense Low Power General Purpose Operational Amplifiers |
|
Desde 2024. D4U Semiconductor.
|