BD139 |
Part Number | BD139 |
Manufacturer | CDIL |
Description | Collector -Emitter Voltage Collector -Emitter Voltage (RBE=1kΩ) Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation @ Ta=25ºC Derate ab... |
Features |
Sustaining Voltage
*VCEO (sus)
IC=30mA, IB=0 BD135
BD137
BD139
Collector Cut off Current
ICBO
VCB=30V, IE=0
VCB=30V, IE=0, Tc=125ºC
Emitter Cut off Current
IEBO
VEB=5V, IC=0
DC Current Gain
*hFE IC=0.005A, VCE=2V IC=0.15A, VCE=2V IC=0.5A, VCE=2V
*Pulse test:- Pulse width=300µs, duty cycle=2%
MIN 45 60 80
25 40 25
BD139 80 100 100
UNIT V V V V A A A W
mW/ºC W
mW/ºC W
ºC
ºC/W ºC/W
MAX UNIT
V V V 0.1 µA 10 µA 10 µA
250
Continental Device India Limited
Data Sheet
Page 1 of 4
NPN EPITAXIAL SILICON POWER TRANSISTORS
ECB
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified ot... |
Document |
BD139 Data Sheet
PDF 234.56KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BD130 |
Comset Semiconductors |
NPN Silicon Transistor | |
2 | BD130 |
Solitron Devices |
NPN Silicon Power | |
3 | BD13003B |
SeCoS |
NPN Plastic Encapsulated Transistor | |
4 | BD131 |
INCHANGE |
NPN Transistor | |
5 | BD131 |
NXP |
NPN power transistor | |
6 | BD131 |
Comset Semiconductors |
SILICON PLANAR EPITAXIAL POWER TRANSISTORS | |
7 | BD132 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | BD132 |
Comset Semiconductors |
SILICON PLANAR EPITAXIAL POWER TRANSISTORS | |
9 | BD132 |
INCHANGE |
PNP Transistor | |
10 | BD1321G |
ROHM |
Ground Sense Low Power General Purpose Operational Amplifiers |