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N-Channel Enhancement Mode Power MOSFET |
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N-channel Enhancement Mode Power MOSFET w.belling.com.cn Page 1/6 Units V V A A A W W/℃ mJ A mJ oC oC Units ℃/ W ℃/ W 3/28/2007 BLV4N60 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs ID |
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SHANGHAI BELLING |
N-channel Enhancement Mode Vetical D-MOS Transistor Very fast switching Logic level compatible Applications Relay driver High speed line driver Logic level translator. Size Chip size: 495µm ×490µm Chip thickness: 220±20µm. structure Planar type Electrodes: Aluminum alloy Backside metal: Au alloy S |
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P-channel vertical MOSFET |
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N-channel Enhancement Mode Power MOSFET Max. Max. Value 1.7 62.5 Units ℃/ W ℃/ W http://www.belling.com.cn Page 1/6 3/28/2007 http://www.Datasheet4U.com BLV730 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS ∆BVDSS /∆T |
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N-channel Enhancement Mode Power MOSFET x. Max. Value 1.0 62.5 Units ℃/ W ℃/ W http://www.belling.com.cn Page 1/6 3/28/2007 http://www.Datasheet4U.com BLV740 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS ∆BVDSS /∆TJ R |
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N-Channel Enhancement Mode Power MOSFET .cn -1Total 1 Pages 2/27/2008 |
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N-Channel Enhancement Mode Power MOSFET |
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N-Channel Enhancement Mode Power MOSFET www.belling.com.cn Page 1/6 Units V V A A A W W/℃ mJ A mJ oC oC Units ℃/ W ℃/ W 3/28/2007 BLV840 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs I |
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BELLING |
N-Channel Enhancement Mode Power MOSFET x. Value 1 62.5 http://www.belling.com.cn -1Total 6 Pages Units V V A A A W W/℃ mJ A mJ oC oC Units ℃/ W ℃/ W 3/28/2007 BLV6N60 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS ∆ |
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N-Channel Enhancement Mode Power MOSFET .belling.com.cn Page 1/6 Units V V A A A W W/℃ mJ A mJ oC oC Units ℃/ W ℃/ W 3/28/2007 BLV7N60 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs IDS |
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SHANGHAI BELLING |
Vertical N-channel MOSFET |
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N-channel Enhancement Mode Power MOSFET x. http://www.belling.com.cn -1Total 6 Pages Value 5.5 62.5 Units V V A A A W W/℃ mJ A mJ oC oC Units ℃/ W ℃/ W 2008.08.08 BLV2N60 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDS |
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BELLING |
N-Channel Enhancement Mode Power MOSFET A W W/℃ mJ A mJ oC oC Units ℃/ W ℃/ W http://www.belling.com.cn -1Total 6 Pages 2008.08.08 BLV640 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS RDS(ON) VGS(th) g fs IDSS IGSS |
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N-Channel Enhancement Mode Power MOSFET //www.belling.com.cn Page 1/6 Units V V A A A W W/℃ mJ A mJ oC oC Units ℃/ W ℃/ W 3/28/2007 BLV830 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs |
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BELLING |
N-Channel Enhancement Mode Power MOSFET ient Max. Value - 120 http://www.belling.com.cn -1Total 6 Pages Units V V A A A W W/℃ mJ A mJ oC oC Units ℃/ W ℃/ W 3/28/2007 BLV1N60A N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol |
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BELLING |
N-Channel Enhancement Mode Power MOSFET Value 4.5 110 http://www.belling.com.cn -1Total 6 Pages Units V V A A A W W/℃ mJ A mJ oC oC Units ℃/ W ℃/ W 3/28/2007 BLV1N60 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS ∆B |
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Desde 2024. D4U Semiconductor.
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