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BLV830 |
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| Part Number | BLV830 |
| Manufacturer | BELLING |
| Description | This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise n... |
| Features |
//www.belling.com.cn
Page 1/6
Units V V A A A W
W/℃ mJ A mJ oC oC
Units ℃/ W ℃/ W
3/28/2007
BLV830
N-channel Enhancement Mode Power MOSFET
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs IDSS
IGSS Qg Qgs Qgd t (on) tr t (off) tf Ciss Coss Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance Gate Threshold Voltage
Forward Transconductance(note3)
Drain-Source Leakage Current Drain-Source Leakage Current Tc=125℃ Gate-Source Leakage Current Total G... |
| Document |
 BLV830 Data Sheet
PDF 462.24KB |
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Desde 2024. D4U Semiconductor.
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