BLV7N60 |
Part Number | BLV7N60 |
Manufacturer | BELLING |
Description | This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise n... |
Features |
.belling.com.cn
Page 1/6
Units V V A A A W
W/℃ mJ A mJ oC oC
Units ℃/ W ℃/ W
3/28/2007
BLV7N60
N-channel Enhancement Mode Power MOSFET
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs IDSS
IGSS Qg Qgs Qgd t (on) tr t (off) tf Ciss Coss Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance Gate Threshold Voltage
Forward Transconductance(note3)
Drain-Source Leakage Current Drain-Source Leakage Current Tc=125℃ Gate-Source Leakage Current Total Gate ... |
Document |
BLV7N60 Data Sheet
PDF 466.70KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BLV7N60 |
Estek |
N-channel Enhancement Mode Power MOSFET | |
2 | BLV7002 |
SHANGHAI BELLING |
N-channel Enhancement Mode Vetical D-MOS Transistor | |
3 | BLV730 |
BELLING |
N-channel Enhancement Mode Power MOSFET | |
4 | BLV740 |
BELLING |
N-channel Enhancement Mode Power MOSFET | |
5 | BLV75 |
Philips |
VHF power transistor | |
6 | BLV75-12 |
Philips |
VHF power transistor |