Busque con el número de pieza junto con el fabricante o la descripción
BLV840 |
Click to view a larger image
| Part Number | BLV840 |
| Manufacturer | BELLING |
| Description | This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise n... |
| Features |
www.belling.com.cn
Page 1/6
Units V V A A A W
W/℃ mJ A mJ oC oC
Units ℃/ W ℃/ W
3/28/2007
BLV840
N-channel Enhancement Mode Power MOSFET
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs IDSS
IGSS Qg Qgs Qgd t (on) tr t (off) tf Ciss Coss Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance Gate Threshold Voltage
Forward Transconductance(note3)
Drain-Source Leakage Current Drain-Source Leakage Current Tc=125℃ Gate-Source Leakage Current Total Gat... |
| Document |
 BLV840 Data Sheet
PDF 470.64KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BLV830 |
BELLING |
N-Channel Enhancement Mode Power MOSFET |
|
| 2 | BLV857 |
NXP |
UHF linear push-pull power transistor |
|
| 3 | BLV859 |
NXP |
UHF linear push-pull power transistor |
|
| 4 | BLV861 |
NXP |
UHF linear push-pull power transistor |
|
| 5 | BLV862 |
NXP |
UHF linear push-pull power transistor |
|
| 6 | BLV88N30 |
BELLING |
N-Channel Enhancement Mode Power MOSFET |
|
Desde 2024. D4U Semiconductor.
|