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BLV4N60 |
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| Part Number | BLV4N60 |
| Manufacturer | SHANGHAI BELLING |
| Description | This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise n... |
| Features |
w.belling.com.cn
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Units V V A A A W
W/℃ mJ A mJ oC oC
Units ℃/ W ℃/ W
3/28/2007
BLV4N60
N-channel Enhancement Mode Power MOSFET
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs IDSS
IGSS Qg Qgs Qgd t (on) tr t (off) tf Ciss Coss Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance Gate Threshold Voltage
Forward Transconductance(note3)
Drain-Source Leakage Current Drain-Source Leakage Current Tc=125℃ Gate-Source Leakage Current Total Gate... |
| Document |
 BLV4N60 Data Sheet
PDF 463.00KB |
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